Electronic properties of semiconductors: introductory remarks

Authors

  • Paulo Sérgio Guimarães Departamento de Física, Centro de Ciências Naturais e Exatas - CCNE Universidade Federal de Santa Maria - UFSM, Santa Maria, RS.

DOI:

https://doi.org/10.5902/2179460X26311

Abstract

The aim of this text is to present a review of the electronic properties of semiconductor materials devoted mainly to undergraduate physics and related science students interested in contact the microscopic aspects that determine these properties. It will be offered a selection of topics covering most of the core of the subject.

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References

BARDEEN J., BRATTAIN W. H., Phys. Rev. 74, 230(1948).

BARDEEN J., BRATTAIN W. H., Phys. Rev. 75, 1208(1949).

BASSANI F., IADONIZIG., e PRECIOZI B., Rep. Preg. Phys. 37, 1099(1974).

BASSANI F., PASTORI PARRAVICINE G., Electronic States and Optical Transitions in Solids (Pergamon, Oxford) (1975).

BOURGOVIN J., LANNOO M., Point defects in Semiconductors II: Experimental Aspects (Springer-Verlag, Berlin) (1983).

COULSON C. A., Radiation Damage and Defects in Semiconductors, Conference Series no. 16, J. E. Whitehouse ed. (Institute of Physics, London). p. 249 (1972).

CRAWFORD J. H., JR., e SLIFKIN L. M. editores, Point Defects in Solids, VoI. 2, (Plenum, New York) (1975).

DEAN P. J., Trans. Mel. Soc. of AIME, 242, 1384(1968).

DEAN P. J, Prog. Solid State Chem., 8, 1(1973).

FOWLER W. B. editor, Physics. of Color Centers. (Academic, New York) (1968).

GRIMMEISS G. H., Ann. Rev. Matter Sci. 7, 341 (1977).

GUIMARÃES P. S., PARADA N. J., e FERREIRA L. G., Sol. Stale Comm.27, 137(1978).

KITTEL C., Quantum Theory of Solids (willey, New York) (1963).

KITTEL C, Introduction to Solid State Physics, 5ª ed. (Willey, New York) (1976).

KOHN W., in Solid State Physics, vol. 5, 257(1957).

LANNOO M., e BOURGOVIN J., Point Defects in Semiconductors I: Theoretical Aspects (Springer-Verlag, Berlin) (1981).

MILLER G. L., LANG D. V., e KIMERLING L.C., Annu. Rev. Matter Sci. 7, 377(1977).

MILNES A. G., Deep Impurities in Semiconductors (Willey, New York)(1973).

PANTELIDES S. T., Rev. Mod. Phys. 50, 797 (1978).

PRENER J. S, e WILLIAMS F. E., Phys. Rev. 101, 1427 (1956).

REBANE K K., Impurity Spectra of Solids (Plenum, New York) (1970).

QUEISSER H. J., Festkorperprobleme 11, 45(1971).

REISS H., FULLER C. S., e MORIN F. J, Bell Syst. Tech. J. 35, 535 (1956).

ROlTSIN A. S., Sov. Phys. Semicond. 8, 1(1974).

SHAFFER J., e WILLIAMS F. E., Physics of Semiconductors pp. 811-818 (Dunod, Paris) (1964).

SHKLOVSKY B. I., e EFROS A. L., Electronic Properties or Doped Semiconductors (Springer-Verlag, Berlin) (1983).

SHOKLEY W., Bell Syst. Tech. J. 28, 453 (1949).

SHOKLEY W., Electrons and Holes ln Semiconductors (Van Norstrand, New York) (1950).

DA SILVA C. A., III Encontro Regional de Atualização em Física.

WANNIER G., Phys. Rev. 52, 191 (1937).

WATTS R. K., Point Defects in Solids (Willey, New York) (1977).

WILLIAMS F. E., J. Phys. Chem. Solide 12, 265 (1960).

WILLIAMS F., Phys. Status Solidi 25, 493 (1968).

WILSON A. H., Proc. R. Soc. A 134, 277 (1932).

Published

1992-12-14

How to Cite

Guimarães, P. S. (1992). Electronic properties of semiconductors: introductory remarks. Ciência E Natura, 14(14), 15–28. https://doi.org/10.5902/2179460X26311